We have achieved the world’s first room-temperature bonding of large-diameter diamond wafers processed with gas cluster ion beam (GCIB) ultra-smooth finishing.
Meisei University, Osaka University, and IIPT have jointly succeeded for the first time worldwide in processing large-diameter diamond substrates into ultra-smooth surfaces with a surface roughness of 0.5 nanometers or less, and bonding these to gallium nitride wafers and piezoelectric single-crystal wafers at room temperature.
明星大学release：大口径ダイヤモンドウエハの超平滑化加工と常温接合に世界で初めて成功 ～EVや高速通信に使われるパワー半導体デバイスの高性能化に貢献～
明星大学release：大口径ダイヤモンドウエハの超平滑化加工と常温接合に世界で初めて成功 ～EVや高速通信に使われるパワー半導体デバイスの高性能化に貢献～